SPN3400 description applications the SPN3400 is the n-channel logic enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch z dsc z lcd display inverter features pin configuration(sot-23-3l) part marking ? 30v/5.4a,r ds(on) = 38m ? @v gs =10v ? 30v/4.6a,r ds(on) = 42m ? @v gs =4.5v ? 30v/3.8a,r ds(on) = 55m ? @v gs =2.5v ? super high density cell design for extremely low r ds (on) ? exceptional on-resistance and maximum dc current capability ? sot-23-3l package design product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPN3400s23rg sot-23-3l a0yw SPN3400s23rgb sot-23-3l a0yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPN3400s23rg : tape reel ; pb ? free SPN3400s23rgb : tape reel ; pb ? free ; halogen - free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 30 v gate ?source voltage v gss 12 v t a =25 4.5 continuous drain current(t j =150 ) t a =70 i d 3.5 a pulsed drain current i dm 25 a continuous source current(diode conduction) i s 1.7 a t a =25 2.0 power dissipation t a =70 p d 1.3 w operating junction temperature t j 150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 90 /w SPN3400 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 30 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 0.8 1.6 v gate leakage current i gss v ds =0v,v gs =12v 100 na v ds =24v,v gs =1.0v 1 zero gate voltage drain current i dss v ds =24v,v gs =0.0v t j =55 10 ua on-state drain current i d(on) v ds R 4.5v,v gs =4.5v 10 a v gs = 10v,i d =5.4a 0.030 0.038 v gs =4.5v,i d =4.6a 0.034 0.042 drain-source on-resistance r ds(on) v gs =2.5v,i d =3.8a 0.040 0.055 ? forward transconductance gfs v ds =4.5v,i d =5.4a 12 s diode forward voltage v sd i s =1.7a,v gs =0v 0.8 1.2 v dynamic total gate charge q g 10 18 gate-source charge q gs 1.6 gate-drain charge q gd v ds =15v gs =10v i d 6.7a 3.2 nc input capacitance c iss 450 output capacitance c oss 240 reverse transfer capacitance c rss v ds =15v gs =0v f=1mhz 38 pf t d(on) 7 15 turn-on time t r 10 20 t d(off) 20 40 turn-off time t f v dd =15r l =15 i d 1.0a,v gen =10 r g =6 ? 11 20 ns SPN3400 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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